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| Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm Not soldered 2.0 max. For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes o 3 plastic package o3.80.2 o3.00.2 15.01.0 4.50.3 5.00.2 0.6 2-0.8 max. 2-0.50.1 2 0.50.1 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 -25 to +80 -30 to +100 Unit V V mA mW C C (1.5) 1.7 1.0 1 2.54 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) P tr, tf*2 VCE(sat) *3 Conditions VCE = 10V VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100 ICE(L) = 1mA, L = 100 lx*1 lx*1 min 0.05 typ max 0.5 1.5 Unit A mA nm deg. s 850 30 150 0.7 1.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, *3 I CE(L) Classifications Class Q 0.05 to 0.25 R 0.18 to 0.8 S 0.7 to 1.5 ICE(L) (mA) ,, 50 RL 1 PNA2083M Darlington Phototransistors PC -- Ta 120 24 ICE(L) -- VCE 10 3 ICE(L) -- L ICE(L) (mA) VCE = 10V Ta = 25C T = 2856K PC (mW) 100 ICE(L) (mA) Ta = 25C T = 2856K 20 10 2 Collector power dissipation 80 16 PC = 100mW L = 20 lx 12 10 lx 8 5 lx 4 2 lx 1 lx 0 4 8 12 16 20 24 Collector photo current Collector photo current 60 10 40 1 20 0 - 20 0 20 40 60 80 100 0 10-1 10-1 1 10 102 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) -- Ta 10 VCE = 10V 10 2 ICEO -- Ta VCE = 10V 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (mA) ICEO (A) 10 S (%) Relative sensitivity 0 20 40 60 80 100 80 Collector photo current 60 Dark current 1 1 40 10 -1 20 10 -1 - 40 0 40 80 120 10 -2 - 20 0 600 700 800 900 1000 1100 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 10 20 Sig.IN tr -- ICE(L) VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50 tf -- ICE(L) VCC Sig. OUT RL 90% 10% Relative sensitivity S (%) 90 80 70 60 50 40 30 20 ,, , 30 tr (s) 40 50 60 70 80 90 Rise time 500 Fall time 10 3 RL = 1k tf (s) , 10 3 10 2 10 10 -2 10 -1 Sig. OUT 50 tr td tf tr td tf RL = 1k 500 100 VCC = 10V Ta = 25C 1 10 100 10 2 10 10 -2 VCC = 10V Ta = 25C 10 -1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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